Phase change memory mask

ABSTRACT

Technology for writing data to a phase change memory array is disclosed. In an example, a method may include identifying mask logic for masking cells in the phase change memory array and routing the mask logic to the cells. The method may further include routing input data to the cells. Set and reset pulses for the cells may be selectively prevented or inhibited based on the mask logic.

PRIORITY DATA

This application is a continuation of U.S. patent application Ser. No.13/796,462, filed on Mar. 12, 2013, now issued as U.S. Pat. No.8,913,425, which is incorporated herein by reference.

TECHNICAL FIELD

Embodiments described herein relate generally to phase change memory.

BACKGROUND

Phase change memories use phase change materials, (i.e., materials thatmay be electrically switched between amorphous and crystalline states),as an electronic memory. One type of memory element utilizes a phasechange material that may be, in one application, electrically switchedbetween generally amorphous and generally crystalline local orders orbetween detectable states of local order across the entire spectrumbetween completely amorphous and completely crystalline states.

Typical materials suitable for such an application include variouschalcogenide elements. The state of the phase change materials is alsonon-volatile. When the memory is set in either a crystalline,semi-crystalline, amorphous, or semi-amorphous state representing aresistance value, that value is retained until reprogrammed, even ifpower is removed. This is because the program value represents a phaseor physical state of the material (e.g., crystalline or amorphous).

The state of the phase change materials is also non-volatile in that,when set in either a crystalline, semi-crystalline, amorphous, orsemi-amorphous state representing a resistance value, that value isretained until changed by another programming event, as that valuerepresents a phase or physical state of the material (e.g., crystallineor amorphous). The state is unaffected by removing electrical power.

BRIEF DESCRIPTION OF THE DRAWINGS

Features and advantages of the disclosure will be apparent from thedetailed description which follows, taken in conjunction with theaccompanying drawings, which together illustrate, by way of example,features of the disclosure; and, wherein:

FIG. 1 illustrates a table of bitwise mask logic in accordance with anexample;

FIG. 2 illustrates a block diagram of a memory array in accordance withan example;

FIG. 3 illustrates a memory receiver in accordance with an example;

FIG. 4 illustrates a memory system diagram in accordance with anexample;

FIG. 5 illustrates application of a mask to allow a set pulse and resetpulse on uninhibited bits in accordance with an example;

FIG. 6 illustrates a flow diagram of a method of writing data to a phasechange memory array in accordance with an example; and

FIG. 7 illustrates a memory system diagram in accordance with anexample.

Reference will now be made to the exemplary embodiments illustrated, andspecific language will be used herein to describe the same. It willnevertheless be understood that no limitation of the scope or tospecific invention embodiments is thereby intended.

DESCRIPTION OF EMBODIMENTS

Before invention embodiments are disclosed and described, it is to beunderstood that no limitation to the particular structures, processsteps, or materials disclosed herein is intended, but also includesequivalents thereof as would be recognized by those ordinarily skilledin the relevant arts. It should also be understood that terminologyemployed herein is used for the purpose of describing particularexamples only and is not intended to be limiting. The same referencenumerals in different drawings represent the same element. Numbersprovided in flow charts and processes are provided for clarity inillustrating steps and operations and do not necessarily indicate aparticular order or sequence.

EXAMPLE EMBODIMENTS

An initial overview of technology embodiments is provided below andspecific technology embodiments are then described in further detail.This initial summary is intended to aid readers in understanding thetechnology more quickly but is not intended to identify key or essentialfeatures of the technology nor is it intended to limit the scope of theclaimed subject matter.

Phase change memory is capable of relatively fast bit-alterable writes,such as compared to NAND memory. However, phase change memory writespeeds may be slower than DRAM (Dynamic Random-Access Memory) writespeeds. A goal of phase change memory designers is to provide for readand write speeds which may be comparable to DRAM while maintaining anarea/die size comparable to NAND, while also keeping energy reasonablylow. For example, a cost of the relatively fast write speed of phasechange memory as compared to NAND memory is higher per-bit energy thanis used in NAND technologies.

Certain embodiments of the present technology provide programmable writemask architecture for phase change memory that allows selectiveconfiguration of desired write behavior. For example, write data maskbehavior for each of the bits in an array may be configured from acentral location. Different configurations can be used for differentwrite algorithms, and behavior can be reconfigured post-silicon usingfuses.

Referring to FIG. 1, a table 100, including bitwise mask logic isillustrated in accordance with an example of the present technology.According to the table 100 in FIG. 1, any combination of incomingdesired data and previously sensed data may allow or inhibit asubsequent set or reset pulse. For example, a sequence controller maysend mask logic to cells in an array. The different settings in thelogic (such as the eight settings illustrated in the table of FIG. 1)can be placed in fuses, temporary registers, or other storage forindividual cells. It is noted that the logic in FIG. 1 is exemplary andvarious different configurations may be implemented to allow differentoperations at the cells when incoming data is received depending on thecurrent mask.

The table in FIG. 1 illustrates different potential combinations ofincoming and existing data (shown as “Data In” and “Old Data”respectively). A “1” in data may indicate that a bit is set or is to beset while a “0” in data may indicate that a bit is reset or to be reset.Various operations may be performed based on a desired programmingmethod or based on how the incoming data compares with the existingdata. For example, where incoming data and existing data are the samefor a given bit, such as both incoming data and existing data indicatinga “1” or a “0”, no programming may be performed on the bit. Whereexisting data is a “1” and incoming data is a “0”, the bit may be reset.Where existing data is a “0” and incoming data is a “1”, the bit may beset.

The mask may include a number of configurations for setting and/orresetting a bit. A “1” in the mask may indicate to inhibit an action,such as set or reset actions. A “0” in the mask may indicate to allow anaction. Thus, setmask settings may include, for example:

s_pass_(—)00=1 (data in=0, existing data=0, inhibit set);

s_pass_(—)01=1 (data in=0, existing data=1, inhibit set);

s_pass_(—)10=0 (data in=1, existing data=0, allow set); and

s_pass_(—)11=1 (data in=1, existing data=1, inhibit set).

Similarly, resetmask settings may include, for example:

r_pass_(—)00=1 (data in=0, existing data=0, inhibit reset);

r_pass_(—)01=0 (data in=0, existing data=1, allow reset);

r_pass_(—)10=1 (data in=1, existing data=0, inhibit reset); and

r_pass_(—)11=1 (data in=1, existing data=1, inhibit reset).

The table 100 of FIG. 1 may be a programmable truth table for bitwisemask logic that may be reprogrammed to configurations different than theconfiguration illustrated in order to perform different options based ona desired programming method, some examples of which are describedlater. Also, while the table of FIG. 1 illustrates the use of eight masksettings (including four setmask settings and four resetmask settings),a different number of settings may also be used to implement variousembodiments of the present technology.

Referring to FIG. 2, it can be seen that the settings defined by themask may be routed to the bits or cells in an array. For example each ofthe settings (r_pass_(—)00 through s_pass_(—)11) may be routed to eachof the bits 210-213 (i.e., bit 0 through bit 3). While FIG. 2illustrates four bits in an array, any number of bits may be included inan individual array and an actual implementation may include many morebits than the simplified example illustrated.

Each of the bits in the array may include a sense amplifier or senselatch (i.e., “data_sense”) that holds data read from the array (i.e.,existing data, or “old data” as in FIG. 1). A separate data_in signal(data_in<0> through data_in<3>) may be routed to each bit. Each bit canhave any of the 4 combinations of data_in and data_sense (i.e., “00”,“01”, “10” and “11”).

Referring to FIG. 3, within each bit may be a receiver 300 for receivingthe mask configuration. The receiver 300 may evaluate the combination ofdata_in and data_sense along with the eight global mask signalsr_pass_(—)00/01/10/11 and s_pass_(—)00/01/10/11. The receiver 300 maydetermine whether to inhibit or prevent (i.e., “mask out”) a set pulseor a reset pulse based on the combination of data_in and data_sensealong with the eight global mask signals. The set and reset masks may belatched into the receiver with a global clk_maskload signal. When awrite operation begins, the write operation may apply set and resetpulses to the bits that have clear or uninhibited masks for setting orresetting. In other words, bits that allow a set operation will have aset write operation applied thereto and bits that allow a resetoperation will have a reset write operation applied thereto. In theexample illustrated, the receiver 300 includes one or more AND-OR-INVERTgates followed by an inverter for set and reset mask applications.However, the receiver 300 may also be implemented with different logicgates. In practice, the receiver 300 may receive a mask configurationfrom a sequence controller or other device configured to define ordictate the mask configuration. The receiver 300 may receive theexisting data (i.e., data_sense) and the incoming data (i.e., data_in)in parallel with receipt of the mask configuration. The receiver 300 maythen evaluate the existing and incoming data in light of the receivedmask configuration to determine whether to allow or inhibit a set actionand whether to allow or inhibit a reset action.

Previous technologies have implemented write masking, but the writemasking has been hard-wired into write circuits. For example, some NORgate memory designs may use a single write mask bit that either allowsprogramming or not. However, phase change memory technology is not asmature as NAND and DRAM technologies and thus may have to be moreflexible with how the read and write methods are implemented as comparedto read and write algorithms for NAND and DRAM. Embodiments of thepresent technology provide examples of flexibility, where write maskingis not hard-wired into write circuits, but is instead programmable andreconfigurable, even at run time. It is noted that some memory devicesutilizing certain embodiments of the present technology, while havingprogrammable write masks, may be programmed to operate in a definedmanner without enabling run-time variations. For example, a memorydevice may be manufactured and then tested to determine which of aplurality of programming methods performs best for the memory device andthen such programming method may be implemented via the programmablemask. Some example programming methods will now be described.

To decrease overall write energy, previous or existing data in an arraymay be read and compared to incoming data. If a bit state is changedfrom the existing data to the incoming data, then such bits may beprogrammed, but programming may be avoided when the existing data andthe incoming data for a particular cell matches. For example, if a cellin the array is set (“1”), and the incoming bit data indicates a “1”, anoperation may not be performed on this bit. The data may be leftunchanged so that energy is not spent programming this bit. On average,considering random previous data in the array and random incoming data,25% of the bits will be set and 25% reset. Thus, such a programmingstrategy may reduce energy costs by as much as 50% on average. To seethis energy reduction, there may be circuits that store the set andreset rules for every bit programmed in parallel. This example may beimplemented through the programmable mask using a truth table similar tothe table (100) of FIG. 1.

It is noted, however, that there may be situations where using anenergy-saving programming method is not desired. For example, a user maydesire to ignore the existing array data and write data to the arraybased on the incoming pattern regardless of what may be currentlyprogrammed. Such a strategy may be used, for example, to reset all thecells first and then set some of the cells based on an incoming datapattern. As another example, such a strategy may be used alternativelyto first set all the cells and then reset some of the cells based on anincoming data pattern. In another example, no cells may be set, andcells that are a “0” in the incoming data pattern may be reset.

As has been described previously, the selection of programming methodsfor programming the cells may be performed post-manufacture, as desired.In some instances, manufactured memory chips may exhibit unforeseendifficulties with programming cells as desired. However, using variousembodiments of the present technology, a programming method may bechanged post-manufacture to a different programming method that may notexhibit the same unforeseen difficulties.

In one example, programming profiles can be saved for differentprogramming methods (such as a standard low-energy write, a force write,and so forth, as example programming methods). These profiles can bereconfigured post-manufacture to change the write behavior of the memorydevice. The profiles may be implemented or routed to the cells in anarray to change the write behavior for different write operations (e.g.,a standard write versus a force write) or to address a technologylimitation post-manufacture (e.g., lowest energy for set bits but forcewrite for reset bits).

In some examples, a system may include circuitry, software or firmwareto periodically change a mask. In other words, a sequence controller orother device may generate or route mask settings which change atpredetermined intervals or when predetermined conditions are met, suchas for write operations when data integrity is considered more importantthan writing with low energy consumption, or when a threshold level ofread errors is exceeded and a force write is desired. In one example,mask settings may be routed to the cells in parallel with each receiptof incoming data at the cells. In another example, mask settings may bestored at the receiver until new mask settings are received, such aswhen the settings are to be changed for a particular write operation.

Embodiments of the present technology allow the use of more than onewrite masking method. Embodiments of the present technology also allowthe write masks to be reconfigured for different chip operations or toimplement write procedures differently. In addition, certain embodimentsof the present technology may provide for one or more globalconfigurations of the masking logic that can be changed dynamically ormay be saved without changing. The mask configurations can facilitateset or reset pulsing based on any combination of individual bit data inand existing data. The mask configuration receiver in each bit's controlcircuit can change the behavior of the write masking based on the maskconfiguration received.

Referring to FIG. 4, in one embodiment, the present technology mayfurther be utilized to improve phase change memory write time, area, andenergy using a single thread controller to perform simultaneous resetand set pulses.

Conventional memory technologies perform write operations with seriallyexecuted reset and set pulses. However, performing reset and setoperations at the same time can improve write time for phase changememory. The simultaneous set and reset operations can be performed witha single-thread controller because the set pulse is longer than thereset pulse. For example, the set pulse may be started on some bits, thereset pulse concurrently or subsequently started and then ended on somebits, and afterward the set pulse may be ended on the bits that had theset pulse running. In accordance with embodiments of the presenttechnology, the per-bit masks allow each bit to “know” whether torespond to the controller's signals to allow a set pulse, to allow areset pulse, or to ignore the set and reset pulses (i.e., to inhibit thebit).

FIG. 4 illustrates a system including a sequence controller 420 forrouting a mask configuration to individual cells 415-417 (bit 0 throughbit 2), or rather to a receiver 410-412 for the cells 415-417. Data canbe read in or out of the cells 415-417 via the receivers 410-412. Asingle, single-threaded sequence controller 420 may be used tofacilitate faster writes by doing a reset pulse at the same time as aset pulse without compromising die area or energy reduction techniques.The area may be kept low by using small circuits that repeat every bit(e.g., mask configuration data), and large circuits (e.g., flexiblevoltage sequence controller) kept to a single thread with an areaamortized over many bits. Energy may be kept low by maintaining bitalterability and the reduction of bits' set and reset pulses withoutcompromising area or write speed.

FIG. 5 illustrates an example architecture implementation of a resetpulse during a set pulse using serially-executed macros. A singlesequence controller may generate current/voltage sequence signals. Thesignals may be sent to many receivers. The receivers can hold areset_mask and set_mask that determines whether the bit for a particularreceiver will accept signals from the controller and send the signals tothe bit or whether the receiver will ignore the signals and inhibit thesignals from reaching the bit.

In FIG. 5, pre-read 510 and mask load 515 operations may be run on bitsin parallel. The pre-read operation 510 may load the existing data(i.e., “old data”) as well as the incoming data (i.e., “data in”).Additionally, the pre-read operation 510 may receive mask configurationdata in parallel with the old data and data in. The mask load operation515 may load a mask by using the old and incoming data to determinewhether to make the reset_mask and set_mask “0” (i.e., allow a reset orset operation for that bit) or “1” (i.e., do not allow a reset or setoperation for that bit). The logic for that may follow a truth table,such as the table illustrated in FIG. 1.

A macro may be run in the controller that sends signals to begin a setpulse (i.e., “set start” 520). These signals may be received on bitsthat have a mask with set_mask=0. Bit 1 in this example has a set maskequal to 0. Other bits with set_mask=1 will ignore the set start signal.A reset macro may be run in the controller that sends signals to do thereset pulse 525. These signals may be received for bits withreset_mask=0. Bit 2 in this example has a reset mask equal to 0. Otherbits with reset_mask=1 will ignore the reset start signal. In theillustrated example, bits 0 and 3 have set_mask=1 and reset_mask=1 andwill thus ignore the set and reset signals.

A single operation, such as set or reset, may be performed on a givencell at a given time. The bit logic may be designed such that if a resetpulse is received while the set pulse is running, the reset pulse willbe inhibited. Thus, bits which are to be set may optionally have bothset_mask=0 and reset_mask=0 without detrimental effect since the resetcannot be performed on the bits being set while the bits are being set.

Because the set operation may be longer in time duration than the resetoperation, a delay 530 may be provided for the bits running the setpulse to continue. After the delay, the set pulse may be ended 535.

In some examples, a set pulse may have a sufficient duration thatmultiple reset pulses may be sent to an individual bit during theduration of a single set pulse. For instance, if a desired voltagethreshold is not reached at the bit to be reset after an initial resetpulse, a subsequent reset pulse may be sent in place of or during thedelay while waiting for the set pulse to be completed in order toachieve the desired voltage threshold.

It is noted that NOR and NAND memory designs do not allow programmingwhile erasing (e.g., reset during set) due to technology limitations.For example, in NOR, write masks are 1 bit per cell and can only store a“program” or “do-not-program” value. NAND designs store multiple dataper bit for multi-level cell programming, but the Vth placementoperations on the array are done serially.

Conventional phase change memory technologies may allow a bit-alterablewrite, but the set and reset pulses are controlled by global circuitsand will perform the operations in series.

Rather than duplicate entire circuits and run each circuit in adifferent mode to implement simultaneous reset and set operations, in atleast one embodiment, the present technology can use a single controllercircuit and smaller repeated receivers. The receivers may store two bitsof mask information to allow or block actions coming from thecontroller. The two bits of mask information may be determined based onreceived mask configuration signals, existing data and incoming data.

The simultaneous set and reset operations initiated serially may beaccomplished through the programmable masks implemented in variousembodiments of the present technology or using fixed or non-programmablemasks.

In one embodiment, the phase change material used in the storage devicemay be suitable for non-volatile memory data storage. The phase changematerial may be a material having electrical properties (e.g.,resistance) that may be changed through the application of energy suchas, for example, heat, light, voltage potential, or electrical current.

Examples of phase change materials may include a chalcogenide material.A chalcogenide material may be a material that includes at least oneelement from column VI of the periodic table or may be a material thatincludes one or more of the chalcogen elements, e.g., any of theelements of tellurium, sulfur, or selenium. Chalcogenide materials maybe non-volatile memory materials that may be used to store informationthat is retained even after electrical power is removed.

In one embodiment, the phase change material may be a chalcogenideelement composition from the class of tellurium-germanium-antimony(Te_(x)Ge_(y)Sb_(z)) material or a GeSbTe alloy, such as type 2,2,5although other suitable chalcogenide materials may be used and should beconsidered within the scope of the disclosure.

In one embodiment, if the memory material is a non-volatile, phasechange material, the memory material may be programmed into one of atleast two memory states by applying an electrical signal to the memorymaterial. An electrical signal may alter the phase of the memorymaterial between a substantially crystalline state and a substantiallyamorphous state, wherein the electrical resistance of the memorymaterial in the substantially amorphous state is greater than theresistance of the memory material in the substantially crystallinestate.

Programming of the memory material to alter the state or phase of thematerial may be accomplished by selecting the cell through applying arelatively low voltage, such as zero volts to the selected line and acurrent into the selected column, from one current source to reset acell to a higher resistance or from another current source with a lowercurrent or slower trailing edge to reset to a lower resistance, therebygenerating a voltage potential across the memory material. An electricalcurrent may flow through a portion of the memory material in response tothe applied voltage potentials, and may result in heating of the memorymaterial.

This controlled heating and subsequent controlled cooling may alter thememory state or phase of the memory material. Altering the phase orstate of the memory material may alter an electrical characteristic ofthe memory material. For example, resistance of the material may bealtered by altering the phase of the memory material. Either all or aportion of the phase change memory material may be altered during thewriting pulse. In one example, a portion of memory material thatundergoes phase change may be a region that is adjacent to an electrodecontacting the storage device of the cell for storing the bit. Thememory material may be a programmable resistive material or simply aprogrammable resistance material.

In one embodiment, a voltage pulse with a potential difference of about1.5 volts may be applied across a portion of the memory material byapplying about 0 volts to a line and a current of about 2 mA from awrite current source into a different selected line. For example, thevoltage on one selected line relative to another selected line may bepositive, or the cell or voltages may be reversed. A current flowingthrough the memory material in response to the applied voltagepotentials may result in heating of the memory material. This heatingand subsequent controlled cooling, determined by the write current pulsetrailing edge rate, may alter the memory state or phase of the materialafter the memory material is cooled, from higher to lower resistance,from lower to higher resistance, or to rewrite the existing state toreinforce the existing state.

In a “reset” state, the memory material may be in an amorphous orsemi-amorphous state and in a “set” state, the memory material may be ina crystalline or semi-crystalline state. The resistance of the memorymaterial in the amorphous or semi-amorphous state may be greater thanthe resistance of the material in the crystalline or semi-crystallinestate. The association of reset and set with amorphous and crystallinestates, respectively, is a convention. Other conventions may be adopted.

The information stored in memory material may be read by measuring theresistance of the memory material. As an example, a read current may beprovided to the memory material using the selected row and column and aresulting read voltage across the memory material may be comparedagainst a reference voltage. The resulting read voltage on the columnmay be proportional to the resistance exhibited by the selected memorystorage device when a read current is forced into the column.

EXAMPLES

The following examples pertain to further embodiments.

With reference to FIG. 6, Example 1 is a flow diagram of a method forwriting data to a phase change memory array in accordance with anexample of the present technology. The method may include identifying610 mask logic for masking cells in the phase change memory array androuting 620 the mask logic to the cells. The method may further includerouting 630 input data to the cells. Existing data in the cells may beread 640. Set and reset pulses for the cells may be selectivelyprevented 650 or inhibited based on the mask logic, and further based onthe input data and the existing data.

In one example of the method, the mask logic may be defined by a profilefor an identified operation selected for bit-alterable writing to thephase change memory array. Any number of profiles with different masklogic may be available. In other words, the profile may be one of aplurality of profiles each associated with different mask logic. Atleast one of the plurality of profiles may be an energy saving profileand another at least one of the plurality of profiles may be a forcewrite profile. At least one of the plurality of profiles may be a resetor set pulse minimizing profile and another at least one of theplurality of profiles may be a forced set or reset pulse applied to allcells profile. Other profiles are also contemplated and are consideredto be within the scope of this disclosure.

In one example, the mask logic may be programmable. For example, themethod may include altering an existing mask logic to an altered masklogic. The existing mask logic may be altered to an altered mask logic.The method may also include reverting the altered mask logic to theexisting mask logic after the altered mask logic is routed to the cells.In some examples, the existing mask logic may be altered to the alteredmask logic or the altered mask logic reverted to the existing mask logicat predetermined intervals. Logic for altering the mask logic or foralternating between mask logic may be based on time, read cycles, writecycles, cell measurement, or any of a variety of other factors.

In one example, a combination of existing data and the input data may becompared to the mask logic to obtain a result. A determination may bemade as to whether to prevent a set or reset pulse based on the result.

In one example, the method may include sending a set pulse to set cellsnot inhibited by the mask logic, and subsequently sending a reset pulseto reset cells not inhibited by the mask logic before the set pulse iscomplete. The method may also include delaying further operations untilthe set pulse is complete and/or performing additional reset operations,or rather sending additional reset pulses, before the set pulse iscomplete.

Features of the systems or apparatuses described previously or later mayalso be implemented with respect to the method or any processesdescribed herein, and vice versa. Also, specifics in the examples may beused anywhere in one or more embodiments.

In Example 2, and with reference to FIG. 7, a system 700 in accordancewith an invention embodiment is provided. System 700 may be used inwireless or mobile devices such as, for example, a personal digitalassistant (PDA), a laptop or portable computer with wireless capability,a web tablet, a wireless telephone, a pager, an instant messagingdevice, a digital music player, a digital camera, or other devices thatmay be adapted to transmit and/or receive information wirelessly. System700 may be used in any of the following exemplary systems: a wirelesslocal area network (WLAN) system, a wireless personal area network(WPAN) system, or a cellular network. System 700 may also be used inother systems not specifically recited.

System 700 may include a controller 710, an input/output (I/O) device720 (e.g. a keypad, display), a memory 730, and a wireless interface 740coupled to each other via a bus 750. A battery 770 or other power sourcemay be used in some embodiments. It should be noted that such componentsare merely exemplary and other components not specifically recited couldbe used in place of or included along with one or more of theabove-recited components.

Controller 710 may comprise, for example, one or more microprocessors,digital signal processors, microcontrollers, or the like. Memory 730 maybe used to store messages transmitted to or by system 700. Memory 730may also optionally be used to store instructions that are executed bycontroller 710 during the operation of system 700, and may be used tostore user data. Memory 730 may be provided by one or more differenttypes of memory. For example, memory 730 may comprise any type of randomaccess memory, a volatile memory, a non-volatile memory such as a flashmemory and/or a memory such as memory discussed herein.

I/O device 720 may be used by a user to generate a message. System 700may use wireless interface 740 to transmit and receive messages to andfrom a wireless communication network with a radio frequency (RF)signal. Examples of wireless interface 740 may include an antenna, awireless transceiver, or other signal transmitting/receiving devices.

In one example, the system 700 may include the processor 760, the powersource or battery 770, and a phase change memory 730 coupled to theprocessor and including an array of cells. The controller 710 may be asequence controller configured to route a mask to the array of cells. Amask receiver (not shown in FIG. 7) for individual cells in the array ofcells may receive the mask, identify existing data, identify input dataand determine whether to inhibit a set pulse or a reset pulse to thecells.

The mask may include eight signals defining operations to perform forthe individual cells based on the existing data and the input data. Themask may be a programmable mask. The mask receiver may enablesimultaneous set and reset operations on different cells in the array bythe sequence controller. The sequence controller may perform or initiatethe set and reset operations sequentially or simultaneously.

The controller 710 or sequence controller may further comprise a maskgenerator configured to route the mask to the mask receiver. Thecontroller 710 may further be configured to generate the mask forrouting to the mask receiver based on instructions received from theprocessor 760.

The system 700 may include a latch for loading the existing data inparallel with receipt of the mask at the mask receiver. The latch may bea part of the mask receiver.

In one example, the mask receiver may enable simultaneous set and resetoperations on different cells in the array through sequential initiationby the sequence controller when the mask inhibits the reset pulse on atleast one of the cells and inhibits the set pulse on a different atleast one of the cells.

In Example 3, the represented embodiment of the present technologyprovides a phase change memory. The phase change memory may include anarray of phase change memory cells and a mask receiver for individualcells in the array to receive a mask, identify existing data, identifyinput data and determine whether to inhibit a set pulse or a resetpulse. The mask may include up to eight or more signals definingoperations to perform for the individual cells based on the existingdata and the input data and may enable simultaneous set and resetoperations on different cells in the array through sequential initiationby the sequence controller. The mask may include greater than eightsignals, for example, when more than two states are present (i.e., setand reset states). The mask may include fewer than eight signals, forexample, when an addressed bus is implemented, such that four signalsare used to load the reset mask and then subsequently to load the setmask, or vice versa.

The individual cells may be configured to receive the mask and the inputdata in parallel. A latch may be included for loading the existing datain parallel with receipt of the mask at the mask receiver.

Various techniques, or certain aspects or portions thereof, may take theform of program code (i.e., instructions) embodied in tangible media,such as floppy diskettes, CD-ROMs, hard drives, non-transitory computerreadable storage medium, or any other machine-readable storage mediumwherein, when the program code is loaded into and executed by a machine,such as a computer, the machine becomes an apparatus for practicing thevarious techniques. Circuitry can include hardware, firmware, programcode, executable code, computer instructions, and/or software. Anon-transitory computer readable storage medium can be a computerreadable storage medium that does not include signal. In the case ofprogram code execution on programmable computers, the computing devicemay include a processor, a storage medium readable by the processor(including volatile and non-volatile memory and/or storage elements), atleast one input device, and at least one output device. The volatile andnon-volatile memory and/or storage elements may be a RAM, EPROM, flashdrive, optical drive, magnetic hard drive, solid state drive, or othermedium for storing electronic data. The node and wireless device mayalso include a transceiver module, a counter module, a processingmodule, and/or a clock module or timer module. One or more programs thatmay implement or utilize the various techniques described herein may usean application programming interface (API), reusable controls, and thelike. Such programs may be implemented in a high level procedural orobject oriented programming language to communicate with a computersystem. However, the program(s) may be implemented in assembly ormachine language, if desired. In any case, the language may be acompiled or interpreted language, and combined with hardwareimplementations.

It should be understood that many of the functional units described inthis specification have been labeled as modules, in order to moreparticularly emphasize their implementation independence. For example, amodule may be implemented as a hardware circuit comprising custom VLSIcircuits or gate arrays, off-the-shelf semiconductors such as logicchips, transistors, or other discrete components. A module may also beimplemented in programmable hardware devices such as field programmablegate arrays, programmable array logic, programmable logic devices or thelike.

Modules may also be implemented in software for execution by varioustypes of processors. An identified module of executable code may, forinstance, comprise one or more physical or logical blocks of computerinstructions, which may, for instance, be organized as an object,procedure, or function. Nevertheless, the executables of an identifiedmodule need not be physically located together, but may comprisedisparate instructions stored in different locations which, when joinedlogically together, comprise the module and achieve the stated purposefor the module.

Indeed, a module of executable code may be a single instruction, or manyinstructions, and may even be distributed over several different codesegments, among different programs, and across several memory devices.Similarly, operational data may be identified and illustrated hereinwithin modules, and may be embodied in any suitable form and organizedwithin any suitable type of data structure. The operational data may becollected as a single data set, or may be distributed over differentlocations including over different storage devices, and may exist, atleast partially, merely as electronic signals on a system or network.The modules may be passive or active, including agents operable toperform desired functions.

Reference throughout this specification to “an example” means that aparticular feature, structure, or characteristic described in connectionwith the example is included in at least one invention embodiment. Thus,appearances of the phrases “in an example” in various places throughoutthis specification are not necessarily all referring to the sameembodiment.

As used herein, a plurality of items, structural elements, compositionalelements, and/or materials may be presented in a common list forconvenience. However, these lists should be construed as though eachmember of the list is individually identified as a separate and uniquemember. Thus, no individual member of such list should be construed as ade facto equivalent of any other member of the same list solely based ontheir presentation in a common group without indications to thecontrary. In addition, various invention embodiments and examples may bereferred to herein along with alternatives for the various componentsthereof. It is understood that such embodiments, examples, andalternatives are not to be construed as de facto equivalents of oneanother, but are to be considered as separate and autonomous.

Furthermore, the described features, structures, or characteristics maybe combined in any suitable manner in one or more embodiments. In thisdescription, numerous specific details are provided, such as examples oflayouts, distances, network examples, etc. One skilled in the relevantart will recognize, however, that many variations are possible withoutone or more of the specific details, or with other methods, components,layouts, measurements, etc. In other instances, well-known structures,materials, or operations are not shown or described in detail but areconsidered well within the scope of the disclosure.

While the forgoing examples are illustrative of the specific embodimentsin one or more particular applications, it will be apparent to those ofordinary skill in the art that numerous modifications in form, usage anddetails of implementation can be made without departing from theprinciples and concepts articulated herein. Accordingly, no limitationis intended except as by the claims set forth below.

What is claimed is:
 1. A phase change memory, comprising: an array ofphase change memory cells; and a mask receiver for individual cells inthe array to receive a mask, identify existing data, identify input dataand determine whether to inhibit a reset pulse.
 2. The memory of claim1, wherein the mask comprises signals defining operations to perform forthe individual cells based on the existing data and the input data. 3.The memory of claim 1, wherein the mask is a programmable mask.
 4. Thememory of claim 1, wherein the mask receiver enables simultaneous setand reset operations on different cells in the array by a sequencecontroller.
 5. The memory of claim 1, wherein the individual cells areconfigured to receive the mask and the input data in parallel.
 6. Thememory of claim 1, further comprising a latch for loading the existingdata in parallel with receipt of the mask at the mask receiver.
 7. Thememory of claim 1, wherein the mask is defined by a profile for anidentified operation selected for bit-alterable writing to the array ofphase change memory cells.
 8. The memory of claim 7, wherein the profileis one of a plurality of profiles each associated with different masklogic.
 9. The memory of claim 8, wherein at least one of the pluralityof profiles is a set or reset pulse minimizing profile and another atleast one of the plurality of profiles is a set or reset pulse appliedto all cells profile.
 10. The memory of claim 9, wherein the profile iseither a set or reset pulse minimizing profile.
 11. A method of writingdata to a phase change memory array, comprising: identifying mask logicfor masking cells in the phase change memory array; routing the masklogic to the cells; routing input data to the cells; and selectivelypreventing set or reset pulses for the cells based on the mask logic.12. The method of claim 11, further comprising comparing a combinationof existing data and the input data to the mask logic to obtain aresult; and determining whether to prevent a set or reset pulse based onthe result.
 13. The method of claim 11, further comprising: altering anexisting mask logic to an altered mask logic.
 14. The method of claim13, further comprising reverting the altered mask logic to the existingmask logic after the altered mask logic is routed to the cells.
 15. Themethod of claim 11, further comprising sending a set pulse to set cellsnot inhibited by the mask logic; and subsequently sending a reset pulseto reset cells not inhibited by the mask logic before the set pulse iscomplete.
 16. The method of claim 15, further comprising delayingfurther operations until the set pulse is complete.
 17. A data storagesystem, comprising: a processor; a power source; a phase change memoryas recited in claim 1 coupled to the processor; and a sequencecontroller to route a mask to an array of cells in the phase changememory.
 18. The system of claim 17, wherein the mask is a programmablemask.
 19. The system of claim 17, wherein the sequence controllerfurther comprises a mask generator configured to route the mask to themask receiver.
 20. The system of claim 17, further comprising a latchfor loading the existing data in parallel with receipt of the mask atthe mask receiver.